sot-363 sot-363 plastic-encapsulate diodes CESD5V0K5 esd protection diode description the CESD5V0K5 is designed to protect voltage sensitive components from esd. excellent cl amping capability, low leakage, and fast response time provide best in class protection on designs that are exposed to esd. because of its sm all size, it is suited for use in cellular phones, mp3 players, digita l cameras and many other portable applications where board s pace is at a premium. features z low leakage z response time is typically < 1 ns z esd rating of class 3 (> 16 kv) p er human body model z iec61000 ? 4 ? 2 level 4 esd protection z these are pb ? free devices maximum ratings @t a =25 parameter symbol limit unit iec61000 ? 4 ? 2(esd) air contact 15 15 kv esd v oltage per human body model per machine model 16 400 kv v peak power dissipation @ 8 x 20 ms @ta 25c (note 1) p pk 100 w steady state power -- 1 diode (note 2) p d 200 mw thermal resistance junction ? to ? ambient r ja 625 /w lead solder temperature ? maximum (10 second duration) t l 260 junction and storage t emperature r ange t j, t stg -55 ~ +150 stresses exceeding m aximum r atings may damage the device. maximum r atings are stress ratings only. functional operation above the r eco mmended. operating c onditions is no t implied. extended exposure to stresses above the r ecommended o perating c ond itions may affect device reliability. electrical characteristics (t a = 25c unless otherwise noted, v f = 0.9 v max. @ i f = 10ma for all types) v rwm (v) i r ( a) @ v rwm v br (v) @ i t i t v c (v) @max i pp =1a v c (v) @max i pp =5a c (pf) device device marking max max min max ma max max max CESD5V0K5 22 5.0 5 6.0 7.2 1.0 9.5 12.5 35 1. non--repetitive current per fi gure 1. derate per figure 2. 2. only 1 diode under power. for all 5 diodes under power, p d will be 20%. mounted on fr--4 board with min pad. 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2013
012345 10 15 20 25 30 0 25 50 75 100 125 150 0 50 100 150 200 250 400 500 600 700 800 900 1000 0.01 0.1 1 10 100 5678910 0 20 40 60 80 100 reverse voltage v r (v) capacitance between terminals c t (pf) t a =25 f=1mhz capacitance characteristics fr-4 board CESD5V0K5 power dissipation p d (mw) power derating curve ambient temperature t a ( ) pulsed t a = 1 00 t a = 2 5 forward current i f (ma) forward voltage v f (mv) forward characteristics reverse current i r (ma) reverse voltage v r (v) t a =25 t a =100 pulsed reverse characteristics 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jun,2013
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